无压烧结碳化硅微粉中的“4N”  代表其纯度 为99.99%，属于高纯度的碳化硅微粉。它是一种具有优良性能的无机非金属材料，在现代工业和科研领域有着广泛的应用，通常应用在制作陶瓷基复合材料，制作航空航天领域耐高温部件；应用在半导体领域，用作半导体制造中的研磨材料，用于硅片的抛光、研磨等。

The "4N"in pressureless sintered silicon carbide powder indicates a purity of 99.99%,classifying it as  high-purity silicon carbide  powder.It  is an inorganic  non-metallic  material  with  excellent properties,widely  used  in  modern  industry  and scientific  research.Typically,it  is  applied  in  the production  of  ceramic  matrix  composites  and high-temperature-resistant     components     for  aerospace   applications.In   the   semiconductor field,it serves as a grinding material for silicon wafer polishing and grinding processes.

5.半导体基板导热填充碳化硅微珠

碳化硅微珠专用于半导体基板导热胶填充，可有效替代传统氮化铝微珠。作为高性能填料，碳化硅热导率高达490 W/m·K, 远超氮化铝的170-200 W/m·K, 提升散热效率30%以上。同时，碳化硅硬度更高（莫氏9.5vs 氮化铝7-8），耐磨性强，热膨胀系数更低（4.0×10^-6/Kvs       4.5×10^-6/K）， 更好地匹配硅基板，减少热应力开裂风险。此外，其化学稳定性和高温耐受性优异，确保在高功率半导体器件中长期可靠运行，显著提高整体热管理和器件寿命。

产品规格D50=30μm、40μm、80μm   以及120 μm

Spherical SiC powder is specifically used for filling thermal conductive adhesives on semiconductor substrates and can effectively replace traditional aluminum nitride balls. As a high-performance filler,silicon carbide has a thermal conductivity of up to 490 W/m·K, far exceeding the 170-200 W/m·K of aluminum nitride,and improving heat dissipation efficiency by more than 30%.At the same time,silicon carbide has higher hardness, stronger wear resistance,and a lower coefficient of thermal expansion (4.0×10^-6/K vs 4.5×10 ^-6/K),which better matches silicon substrates and reduces the risk of thermal stress cracking.In addition,its excellent chemical stability and high temperature tolerance ensure long-term reliable operation in high-power semiconductor devices,significantly improving overall thermal management and device lifespan.

specifications D50=30μm, 40μm, 80μm, and  120μm